Berry Phase Transition in Twisted Bilayer Graphene
arXiv:1603.04806 · doi:10.1088/2053-1583/3/3/035005
Abstract
The electronic dispersion of a graphene bilayer is highly dependent on rotational mismatch between layers and can be further manipulated by electrical gating. This allows for an unprecedented control over electronic properties and opens up the possibility of flexible band structure engineering. Here we present novel magnetotransport data in a twisted bilayer, crossing the energetic border between decoupled monolayers and coupled bilayer. In addition a transition in Berry phase between pi and 2pi is observed at intermediate magnetic fields. Analysis of Fermi velocities and gate induced charge carrier densities suggests an important role of strong layer asymmetry for the observed phenomena.
20 pages main paper + 10 pages supporting information
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Cited by in corpus (8)
- Excess resistivity in graphene superlattices caused by umklapp electron-electron scattering
- Transport measurements in twisted bilayer graphene: Electron-phonon coupling and Landau level crossing
- Stacking transition in bilayer graphene caused by thermally activated rotation
- Linking interlayer twist angle to geometrical parameters of self-assembled folded graphene structures
- Non-trivial quantum oscillation geometric phase shift in a trivial band
- An In-situ Annealing effect of Graphene-Graphene Interlayer Conduction
- Terahertz Landau level spectroscopy of Dirac fermions in millimeter-scale twisted bilayer graphene
- Engineering stacking-induced topological phase transitions in bilayer heterostructures