Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors

Abstract

Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically exfoliated mono-, bi-, and trilayer MoS2 sheets over a wide range of carrier densities realized by a combination of ion gel top gate and SiO2 back gate which allows us to achieve high charge carrier (>10^13) density. We discuss the gating properties of the devices as a function of layer thickness and demonstrate resistivities of as low as 1 kΩ for monolayer and 420Ω for bilayer devices at 10 K. We show that from the capacitive coupling of the two gates, quantum capacitance can be roughly estimated to be on the order of 1 μF/cm^2 for all devices studied. Temperature dependence of the carrier mobility in the high density regime indicates that short-range scatterers limit charge transport at low temperatures.

arXiv comment25 pages

References in corpus (26)

• Atomically thin MoS2: A new direct-gap semiconductor
• Two Dimensional Atomic Crystals
• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Mobility engineering and metal-insulator transition in monolayer MoS2
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide
• First-principles study of the phonon-limited mobility in n-type single-layer MoS2
• Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide
• Electroluminescence in Single Layer MoS2
• Controlling electron-phonon interactions in graphene at ultra high carrier densities
• The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
• Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
• Transport properties of monolayer MoS${}_2$ grown by chemical vapour deposition
• Mono- and Bilayer WS2 Light-Emitting Transistors
• Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
• Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering
• MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
• Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors
• Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
• Accessing the transport properties of graphene and its multi-layers at high carrier density
• Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2 from first principles
• Large Thermoelectricity via Variable Range Hopping in Chemical Vapor Deposition Grown Single-layer MoS2
• Defect-induced conductivity anisotropy in MoS2 monolayers
• Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte
• Large-scale 2D Electronics based on Single-layer MoS2 Grown by Chemical Vapor Deposition
• Multiband Transport in Bilayer Graphene at High Carrier Densities

Cited by in corpus (16)

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• Tailoring Magnetic Anisotropy in Cr${}_2$Ge${}_2$Te${}_6$ by Electrostatic Gating
• Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film
• Generating extreme electric fields in 2D materials by dual ionic gating
• Quantum transport and observation of Dyakonov-Perel spin-orbit scattering in monolayer MoS${}_2$
• Valley Plasmonics in the Dichalcogenides
• Photodetection in p-n junctions formed by electrolyte-gated transistors of two-dimensional crystals
• Quantum Capacitance-Limited MoS2 Biosensors Enable Remote Label-Free Enzyme Measurements
• The impact of valley profile on the mobility and Kerr rotation of transition metal dichalcogenides
• Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films
• Radiation-hardened and Repairable MoS${}_2$ Field Effect Devices with Polymer Solid Electrolyte Gates
• Phase coherent transport in bilayer and trilayer MoS2
• Electronic structure and transport in materials with flat bands: 2D materials and quasicrystals
• Rapid, Quantitative Therapeutic Screening for Alzheimer's Enzymes Enabled by Optimal Signal Transduction with Transistors
• Unconventional enhancement of anomalous Hall effect by tilt of Zeeman field in topologically-nontrivial MXenes, $M_2{M}^{\prime }$C${}_2$O${}_2$