Controlling electron-phonon interactions in graphene at ultra high carrier densities

Dmitri K. Efetov; Philip Kim

doi:10.1103/PhysRevLett.105.256805

paper

Controlling electron-phonon interactions in graphene at ultra high carrier densities

arXiv:1009.2988 · doi:10.1103/PhysRevLett.105.256805

Abstract

We report on the temperature dependent electron transport in graphene at different carrier densities $n$ . Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4 $\times 1 0^{14}$ cm $^{- 2}$ for both electrons and holes. The measured sample resistivity $ρ$ increases linearly with temperature $T$ in the high temperature limit, indicating that a quasi-classical phonon distribution is responsible for the electron scattering. As $T$ decreases, the resistivity decreases more rapidly following $ρ (T) \sim T^{4}$ . This low temperature behavior can be described by a Bloch-Grüneisen model taking into account the quantum distribution of the 2-dimensional acoustic phonons in graphene. We map out the density dependence of the characteristic temperature $Θ_{B G}$ defining the cross-over between the two distinct regimes, and show, that for all $n$ , $ρ (T)$ scales as a universal function of the normalized temperature $T / Θ_{B G}$ .

Controlling electron-phonon interactions in graphene at ultra high carrier densities

Abstract

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