Extraordinary high room-temperature carrier mobility in graphene-WSe${}_2$ heterostructures

Abstract

High charge carrier mobilities play a fundamental role for high-frequency electronics, integrated optoelectronics as well as for sensor and spintronic applications, where device performance is directly linked to the magnitude of the carrier mobility. Van der Waals heterostructures formed by graphene and hexagonal boron nitride (hBN) already outperform all known materials in terms of room temperature mobility. Here, we show that the room temperature carrier mobility of today's best graphene/hBN devices can be surpassed by more than a factor of three by heterostructures formed by tungsten diselenide (WSe${}_2$), graphene and hBN, which can have mobilities as high as 350,000 cm${}^2$/(Vs) and resistivities as low as $15$ Ohm. The resistivity of these devices shows a significantly weaker temperature dependence than the one of graphene on any other known substrate. Notably, the reduced temperature dependence and the resulting mobility enhancement in graphene show an unexpected relation to the thickness of the WSe${}_2$ layer and to the minimum conductivity at the charge neutrality point, suggesting a role of increased charge disorder and/or enhanced screening and questioning the current understanding of electron-phonon scattering in graphene-based van der Waals heterostructures.

22 pages, 16 figures

References in corpus (12)

• Magic-angle graphene superlattices: a new platform for unconventional superconductivity
• Boron nitride substrates for high-quality graphene electronics
• Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Graphene Spintronics
• Controlling electron-phonon interactions in graphene at ultra high carrier densities
• Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
• Observation of interlayer phonon modes in van der Waals heterostructures
• Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride
• Phonon-limited resistivity of graphene by first-principle calculations: electron-phonon interactions, strain-induced gauge field and Boltzmann equation
• Observing imperfection in atomic interfaces for van der Waals heterostructures
• Excess resistivity in graphene superlattices caused by umklapp electron-electron scattering

Cited by in corpus (9)

• Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
• Nanoelectromechanical Sensors based on Suspended 2D Materials
• Wafer-scale integration of graphene-based photonic devices
• Coherent Terahertz Radiation from a Nonlinear Oscillator of Viscous Electrons
• Out-of-plane corrugations in graphene based van der Waals heterostructures
• Influence of interface-induced valley-Zeeman and spin-orbit couplings\\ on transport in graphene-on-WSe${}_2$ heterostructures
• Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate
• Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide
• Single- and narrow-line photoluminescence in a boron nitride-supported MoSe${}_2$/graphene heterostructure