Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate
arXiv:2303.08488 · doi:10.1063/5.0150711
Abstract
We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation of these GC-FETs is associated with the heating of the two-dimensional electron gas in the GC by impinging THz radiation leading to thermionic emission of the hot electrons from the GC to the MG. This results in the variation of the floating gate potential, which affects the source-drain current. At the THz radiation frequencies close to the plasmonic resonance frequencies in the gated GC, the variation of the source-drain current and, hence, the detector responsivity can be resonantly large.
arXiv comment8 pages, 4 figures
References in corpus (21)
- The electronic properties of graphene
- Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
- Graphene plasmonics
- Micrometer-scale ballistic transport in encapsulated graphene at room temperature
- The Renaissance of Black Phosphorus
- Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene
- Room-temperature high detectivity mid-infrared photodetectors based on black arsenic phosphorus
- The electronic thermal conductivity of graphene
- Graphene-based, mid-infrared, room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance
- Very Slow Cooling Dynamics of Photoexcited Carriers in Graphene Observed by Optical-Pump Terahertz-Probe Spectroscopy
- Voltage and temperature dependencies of conductivity in gated graphene
- Quantum capacitance and density of states of graphene
- Teraherz photomixing using plasma resonances in double-graphene layer structures
- Graphene terahertz uncooled bolometers
- Dynamic effects in double graphene-layer structures with inter-layer resonant-tunneling negative conductivity
- Effect of heating and cooling of photogenerated electron-hole plasma in optically pumped graphene on population inversion
- Thermionic Emission and Negative dI/dV in Photoactive Graphene Heterostructures
- Amplification of surface plasmons in graphene-black phosphorus injection laser heterostructures
- Extraordinary high room-temperature carrier mobility in graphene-WSe heterostructures
- Graphene vertical hot-electron terahertz detectors
- Resonant plasmonic terahertz detection in vertical graphene-base hot-electron transistors