Graphene-based, mid-infrared, room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance

Abstract

Graphene is ideally suited for photonic and optoelectronic applications, with a variety of photodetectors (PDs) in the visible, near-infrared (NIR), and THz reported to date, as well as thermal detectors in the mid-infrared (MIR). Here, we present a room temperature-MIR-PD where the pyroelectric response of a LiNbO3 crystal is transduced with high gain (up to 200) into resistivity modulation for graphene, leading to a temperature coefficient of resistance up to 900%/K, two orders of magnitude higher than the state of the art, for a device area of 300x300um2. This is achieved by fabricating a floating metallic structure that concentrates the charge generated by the pyroelectric substrate on the top-gate capacitor of the graphene channel. This allows us to resolve temperature variations down to 15umK at 1 Hz, paving the way for a new generation of detectors for MIR imaging and spectroscopy

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• Highly Sensitive, Fast Graphene Photodetector with Responsivity $>10^6$ A/W Using Floating Quantum Well Gate
• Engineering THz-frequency light generation, detection and manipulation through graphene
• Semi-Transparent Image Sensors for Eye-Tracking Applications
• Photo-Nernst detection of cyclotron resonance in partially irradiated graphene
• Self-aligned local electrolyte gating of 2D materials with nanoscale resolution
• Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate
• Performance limits due to thermal transport in graphene single-photon bolometers