Out-of-plane corrugations in graphene based van der Waals heterostructures
arXiv:2004.02690 · doi:10.1103/PhysRevB.102.195404
Abstract
Two dimensional materials are usually envisioned as flat, truly 2D layers. However out-of-plane corrugations are inevitably present in these materials. In this manuscript, we show that graphene flakes encapsulated between insulating crystals (hBN, WSe2), although having large mobilities, surprisingly contain out-of-plane corrugations. The height fluctuations of these corrugations are revealed using weak localization measurements in the presence of a static in-plane magnetic field. Due to the random out-of-plane corrugations, the in-plane magnetic field results in a random out-of-plane component to the local graphene plane, which leads to a substantial decrease of the phase coherence time. Atomic force microscope measurements also confirm a long range height modulation present in these crystals. Our results suggest that phase coherent transport experiments relying on purely in-plane magnetic fields in van der Waals heterostructures have to be taken with serious care.
References in corpus (28)
- Electric Field Effect in Atomically Thin Carbon Films
- Two Dimensional Atomic Crystals
- Boron nitride substrates for high-quality graphene electronics
- The structure of suspended graphene sheets
- Intrinsic ripples in graphene
- Atomic Structure of Graphene on SiO2
- Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
- Weak localisation magnetoresistance and valley symmetry in graphene
- Electron scattering on microscopic corrugations in graphene
- Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
- Weak localisation in graphene flakes
- Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
- Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO2
- Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices
- Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2/Gr/hBN heterostructures
- High-fidelity conformation of graphene to SiO2 topographic features
- z/-z Symmetry of spin-orbit coupling and weak localization in graphene
- Identifying suitable substrates for high-quality graphene-based heterostructures
- Observing imperfection in atomic interfaces for van der Waals heterostructures
- MoS2: a Choice Substrate for Accessing and Tuning the Electronic Properties of Graphene
- Reliable postprocessing improvement of van der Waals heterostructures
- Limitations to Carrier Mobility and Phase-Coherent Transport in Bilayer Graphene
- Rippled Graphene in an In-Plane Magnetic Field: Effects of a Random Vector Potential
- Random Berry Phase Magnetoresistance as a Probe of Interface Roughness in Si MOSFETs
- Mobility enhancement in graphene by in situ reduction of random strain fluctuations
- Extraordinary high room-temperature carrier mobility in graphene-WSe heterostructures
- Influence of impurity spin dynamics on quantum transport in epitaxial graphene
- Transverse negative magnetoresistance of 2D structures in the presence of strong in-plane magnetic field: weak localization as a probe of interface roughness