Identifying suitable substrates for high-quality graphene-based heterostructures

Abstract

We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene.

6 pages, 5 figures

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Cited by in corpus (21)

• Magnetotransport in heterostructures of transition metal dichalcogenides and graphene
• Tailoring mechanically-tunable strain fields in graphene
• High mobility dry-transferred CVD bilayer graphene
• Mobility enhancement in graphene by in situ reduction of random strain fluctuations
• Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide
• Spin States Protected from Intrinsic Electron-Phonon-Coupling Reaching 100 ns Lifetime at Room Temperature in MoSe${}_2$
• Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures
• Putting high-index Cu on the map for high-yield, dry-transferred CVD graphene
• Plasma-enhanced atomic layer deposition of Al${}_2$O${}_3$ on graphene using monolayer hBN as interfacial layer
• Proximity-Induced Spin-Orbit Coupling in Graphene-Bi${}_{1.5}$Sb${}_{0.5}$Te${}_{1.7}$Se${}_{1.3}$ Heterostructures
• Charge carrier density-dependent Raman spectra of graphene encapsulated in hexagonal boron nitride
• Suspended graphene membranes to control Au nucleation and growth
• Dry-transferred CVD graphene for inverted spin valve devices
• Out-of-plane corrugations in graphene based van der Waals heterostructures
• Raman spectroscopy of monolayer to bulk PtSe2 exfoliated crystals
• Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructures
• Strongly Absorbing Nanoscale Infrared Domains within Graphene Bubbles
• Dry transfer of CVD graphene using MoS${}_2$-based stamps
• Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide
• Current-induced brightening of vacancy-related emitters in hexagonal boron nitride
• Room-temperature spin-lifetime anisotropy exceeding 60 in bilayer graphene spin valves proximity coupled to WSe${}_2$