190 citations · 427 across the 12 of their papers we have counts for
13 papers
Establishing the role of thickness in LaOBr; an alternative gate dielectric for vdW heterostructures
Isaac Antoine Lagaud, Justin Boddison-Chouinard, Antoine Labbé +9
In electronic devices, the quality of the dielectric material is determined by figures of merit such as the band gap, leakage onset field, breakdown field and the number of built-i…
Efficient creation of shallow NV ensembles by high-angle ion implantation
Kento Sasaki, Hideyuki Watanabe, Tokuyuki Teraji +3
Negatively charged nitrogen-vacancy (NV) centers located a few nanometers below the diamond surface are key quantum defects for nanoscale sensing of external spins. However, th…
Direct observation of flat bands in near-magic-angle twisted bilayer CVD graphene
Gianluigi Baiardi, Alex Boschi, Giulia Piccinini +13
Advances in chemical vapor deposition (CVD) growth have driven graphene crystal quality to unprecedented levels, yet it is still unknown whether this route can realize the fragile…
Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers
E. Katsipoulaki, N. G. Chatzarakis, E. Rigoutsou +6
Interlayer excitons in transition metal dichalcogenide (TMD) heterobilayers possess a permanent electric dipole moment and long recombination lifetimes, making them a promising pla…
A Sliding Ferroelectric Resonant Tunnel Junction
Noam Raab, Renu Yadav, Yakov Bloch +7
Ferroelectric tunnel junctions (FTJs) leverage polarization-dependent tunneling through ultrathin barriers to enable two-terminal, non-volatile memory and logic. Although conceptua…
AC magnetometry of van der Waals magnets using ultrasensitive Graphene Hall sensors
Eugene Park, Jihoon Keum, Ji-Hwan Baek +5
Probing the dynamical magnetic properties of two-dimensional (2D) materials requires sensitive techniques capable of detecting small magnetic fields from nanoscale samples. We demo…
Twist-Angle-Controlled Anomalous Gating in Bilayer Graphene/BN Heterostructures
G. Maffione, L. S. Farrar, M. Kapfer +5
Anomalous gating effects-such as gate ineffectiveness and pronounced hysteresis-have been observed in graphene-based systems encapsulated in boron nitride (BN) and linked to a poss…
Reversible optical data storage below the diffraction limit
Richard Monge, Tom Delord, Carlos A. Meriles
Color centers in wide-bandgap semiconductors feature metastable charge states that can be interconverted with the help of optical excitation at select wavelengths. The distinct flu…
Dilemma in All-optical Characterization of Single-layer NiI2 Multiferroics
Yucheng Jiang, Yangliu Wu, Jinlei Zhang +3
Matters Arising in Nature on "Evidence for a single layer van der Waals multiferroic". The search for two dimensional multiferroic materials is an exciting yet challenging endeavor…
Tunable interdot coupling in few-electron bilayer graphene double quantum dots
Luca Banszerus, Alexander Rothstein, Eike Icking +5
We present a highly controllable double quantum dot device based on bilayer graphene. Using a device architecture of interdigitated gate fingers, we can control the interdot tunnel…
Out-of-plane heat transfer in van der Waals stacks: electron-hyperbolic phonon coupling
K. J. Tielrooij, N. C. H. Hesp, A. Principi +20
Van der Waals heterostructures have emerged as promising building blocks that offer access to new physics, novel device functionalities, and superior electrical and optoelectronic…
Identifying suitable substrates for high-quality graphene-based heterostructures
Luca Banszerus, Hendrik Janssen, Martin Otto +6
We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) grap…
Limitations to Carrier Mobility and Phase-Coherent Transport in Bilayer Graphene
S. Engels, B. Terrés, A. Epping +5
We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhib…