Tunable interdot coupling in few-electron bilayer graphene double quantum dots

Abstract

We present a highly controllable double quantum dot device based on bilayer graphene. Using a device architecture of interdigitated gate fingers, we can control the interdot tunnel coupling between 1 to 4 GHz and the mutual capacitive coupling between 0.2 and 0.6 meV, independently of the charge occupation of the quantum dots. The charging energy and hence the dot size remains nearly unchanged. The tuning range of the tunnel coupling covers the operating regime of typical silicon and GaAs spin qubit devices.

6 pages, 4 figures

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Cited by in corpus (11)

• Nanomaterials for Quantum Information Science and Engineering
• Particle-hole symmetry protects spin-valley blockade in graphene quantum dots
• Pauli Blockade of Tunable Two-Electron Spin and Valley States in Graphene Quantum Dots
• Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
• Mechanically-reconfigurable van der Waals devices via low-friction gold sliding
• Extended Hubbard model describing small multi-dot arrays in bilayer graphene
• Tunable p-n junction barriers in few-electron bilayer graphene quantum dots
• Electrically-tunable graphene nanomechanical resonators
• Coherent exchange-coupled nonlocal Kondo impurities
• The role of antisymmetric orbitals and electron-electron interactions on the two-particle spin and valley blockade in graphene double quantum dots
• Gate-defined Kondo lattices with valley-helical quantum dot arrays