Electrostatic detection of Shubnikov-de-Haas oscillations in bilayer graphene by Coulomb resonances in gate-defined quantum dots

Abstract

A gate-defined quantum dot in bilayer graphene is utilized as a sensitive electrometer for probing the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel region next to the quantum dot oscillates due to the formation of Landau levels. This is experimentally observed as oscillations in the gate-voltage positions of the Coulomb resonances of the nearby quantum dot. From the frequency of the oscillations, we extract the charge carrier density in the channel and from the amplitude the shift of the quantum dot potential. We compare these experimental results with an electrostatic simulation of the device and find good agreement.

arXiv comment5 Pages, 4 Figures

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Cited by in corpus (11)

• Electron-hole crossover in gate-controlled bilayer graphene quantum dots
• Spin relaxation in a single-electron graphene quantum dot
• Pauli Blockade of Tunable Two-Electron Spin and Valley States in Graphene Quantum Dots
• Probing two-electron multiplets in bilayer graphene quantum dots
• Pulsed-gate spectroscopy of single-electron spin states in bilayer graphene quantum dots
• Dispersive sensing of charge states in a bilayer graphene quantum dot
• Tunable interdot coupling in few-electron bilayer graphene double quantum dots
• Negative electronic compressibility in charge islands in twisted bilayer graphene
• Gate-defined single-electron transistors in twisted bilayer graphene
• The role of antisymmetric orbitals and electron-electron interactions on the two-particle spin and valley blockade in graphene double quantum dots
• Radio-frequency charge detection on graphene electron-hole double quantum dots