activity
20102022
most citedOptimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning

138 citations · 893 across the 21 of their papers we have counts for

collaborators

21 papers

cond-mat.mtrl-sci2022★ 22 cited

Plasma-enhanced atomic layer deposition of AlO on graphene using monolayer hBN as interfacial layer

Barbara Canto, Martin Otto, Michael J. Powell +7

The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the pl…

physics.app-ph2022★ 25 cited

Role of substrate surface morphology on the performance of graphene inks for flexible electronics

Jasper Ruhkopf, Simon Sawallich, Michael Nagel +6

Two-dimensional (2D) materials, such as graphene, are seen as potential candidates for fabricating electronic devices and circuits on flexible substrates. Inks or dispersions of 2D…

physics.app-ph2021★ 28 cited

Terahertz rectennas on flexible substrates based on one-dimensional metal-insulator-graphene diodes

Andreas Hemmetter, Xinxin Yang, Zhenxing Wang +8

Flexible energy harvesting devices fabricated in scalable thin-film processes are important components in the field of wearable electronics and the Internet of Things. We present a…

physics.app-ph2021★ 138 cited

Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning

Theresia Knobloch, Burkay Uzlu, Yury Yu. Illarionov +7

Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability.…

cond-mat.mtrl-sci2020★ 23 cited

Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride

Vitaliy Babenko, Ye Fan, Vlad-Petru Veigang-Radulescu +9

Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applica…

cond-mat.mes-hall2020★ 13 cited

Electrostatic detection of Shubnikov-de-Haas oscillations in bilayer graphene by Coulomb resonances in gate-defined quantum dots

Luca Banszerus, Thomas Fabian, Samuel Möller +11

A gate-defined quantum dot in bilayer graphene is utilized as a sensitive electrometer for probing the charge density of its environment. Under the influence of a perpendicular mag…