Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature
arXiv:1001.5213 · doi:10.1063/1.3364139
Abstract
We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ~sim50 meV. This demonstrates the potential of bilayer graphene as FET channel material in a conventional CMOS environment.
3 pages, 3 figures
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