paper

Quantum Transport and Field Induced Insulating States in Bilayer Graphene pnp Junctions

arXiv:1009.4669 · doi:10.1021/nl101901g

Abstract

We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to 20,000 at 260mK. Within the band gap, the conductance decreases exponentially by 3 orders of magnitude with increasing electric field, and can be accounted for by variable range hopping with a gate-tunable density of states, effective mass, and localization length. At large B, we observe quantum Hall conductance with fractional values, which arise from equilibration of edge states between differentially-doped regions, and the presence of an insulating state at filling factor ν=0. Our work underscores the importance of bilayer graphene for both fundamental interest and technological applications.

4 figures, to appear in Nano Lett. Minor typos corrected

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