Quantum transport in double-gated graphene devices
arXiv:1207.5843 · doi:10.1016/j.ssc.2012.04.024
Abstract
Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top gates. In zero magnetic fields, we observe formation of pnp junctions with tunable polarity and charge densities, as well as a tunable band gap in bilayer graphene and a tunable band overlap in trilayer graphene. In high magnetic fields, the devices' conductance are quantized at integer and fractional values of conductance quantum, and the data are in good agreement with a model based on edge state equilibration at pn interfaces.
References in corpus (47)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- The Raman Fingerprint of Graphene
- Boron nitride substrates for high-quality graphene electronics
- Chiral tunneling and the Klein paradox in graphene
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Gate-induced insulating state in bilayer graphene devices
- Asymmetry gap in the electronic band structure of bilayer graphene
- Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
- Quantum interference and Klein tunneling in graphene heterojunctions
- Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
- Evidence of Klein tunneling in graphene p-n junctions
- Electronic states and Landau levels in graphene stacks
- Current-induced cleaning of graphene
- Observation of an electrically tunable band gap in trilayer graphene
- Tunable metal-insulator transition in double-layer graphene heterostructures
- Topological confinement in bilayer graphene
- Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene
- Spontaneous Quantum Hall States in Chirally-stacked Few-Layer Graphene Systems
- Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
- Band Structure of ABC-Stacked Graphene Trilayers
- Coulomb-driven broken-symmetry states in doubly gated suspended bilayer graphene
- Midgap states and charge inhomogeneities in corrugated graphene
- Dependence of band structures on stacking and field in layered graphene
- Transport Spectroscopy of Symmetry-Broken Insulating States in Bilayer Graphene
- Klein Backscattering and Fabry-Perot Interference in Graphene Heterojunctions
- Quantized Transport in Graphene p-n Junctions in Magnetic Field
- Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene
- Pseudospin Magnetism in Graphene
- Spatially resolved spectroscopy of monolayer graphene on SiO2
- Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields
- Quantum Anomalous Hall State in Bilayer Graphene
- The experimental observation of quantum Hall effect of l = 3 chiral charge carriers in trilayer graphene
- Spontaneous symmetry breaking and Lifshitz transition in bilayer graphene
- Conductance of p-n-p graphene structures with 'air-bridge' top gates
- Low density ferromagnetism in biased bilayer graphene
- Lattice Theory of Pseudospin Ferromagnetism in Bilayer Graphene: Competing Orders and Interaction Induced Quantum Hall States
- Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene
- Midgap states in corrugated graphene: Ab-initio calculations and effective field theory
- Canted antiferromagnetic phase of the quantum Hall state in bilayer graphene
- Charge transport in dual gated bilayer graphene with Corbino geometry
- Zero-energy states in corrugated bilayer graphene
- Intrinsic Zeeman Effect in Graphene
- Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene
- Quantum Transport and Field Induced Insulating States in Bilayer Graphene pnp Junctions
- Imaging Stacking Order in Few-Layer Graphene
Cited by in corpus (6)
- Self-biased Reconfigurable Graphene Stacks for Terahertz Plasmonics
- Selective equilibration of spin and valley polarized quantum Hall edge states in graphene
- Control of proton transport and hydrogenation in double-gated graphene
- Equilibration of Quantum hall edges in symmetry broken bilayer graphene
- Equilibration of quantum hall edge states and its conductance fluctuations in graphene p-n junctions
- Mode mixing induced by disorder in graphene PNP junction in a magnetic field