Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields

Abstract

We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a function of displacement field and density, accompanied by a strong non-linear behavior in the transport characteristics. The effective transport gap is typically two orders of magnitude smaller than the optical band gaps reported by infrared spectroscopy studies. Detailed temperature dependence measurements shed light on the different transport mechanisms in different temperature regimes.

arXiv comment4 pages, 3 figures

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Cited by in corpus (109)

• Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure
• The electronic properties of bilayer graphene
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• Electronic properties of graphene-based bilayer systems
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• Gate-tunable Topological Valley Transport in Bilayer Graphene
• Engineering symmetry breaking in two-dimensional layered materials
• Layer Hall effect in a 2D topological Axion antiferromagnet
• BN/Graphene/BN Transistors for RF Applications
• Gate Defined Quantum Confinement in Suspended Bilayer Graphene
• Evidence for a Spin Phase Transition at ν=0 in Bilayer Graphene
• Electronic compressibility of layer polarized bilayer graphene
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• Gaps tunable by electrostatic gates in strained graphene
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• Enhanced Thermoelectric Power in Dual-Gated Bilayer Graphene
• Electronic Transport in Disordered Bilayer and Trilayer Graphene
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• Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
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• Bilayer graphene under pressure: Electron-hole Symmetry Breaking, Valley Hall Effect, and Landau Levels
• Screening and collective modes in gapped bilayer graphene
• Conductivity of two-dimensional narrow gap semiconductors subjected to strong Coulomb disorder
• Tailoring supercurrent confinement in graphene bilayer weak links
• Tunneling in graphene-topological insulator hybrid devices
• Optical and transport gaps in gated bilayer graphene
• Evidence of Lifshitz transition in thermoelectric power of ultrahigh mobility bilayer graphene
• Gate tunable non-linear currents in bilayer graphene diodes
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• Graphene: Kinks, Superlattices, Landau levels, and Magnetotransport
• Magnesium-intercalated graphene on SiC: highly n-doped air-stable bilayer graphene at extreme displacement fields
• Quantum transport in double-gated graphene devices
• Strong magnetic proximity effect in Van der Waals heterostructures driven by direct hybridization
• Topological valley transport at the curved boundary of a folded bilayer graphene
• Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors
• Imaging bulk and edge transport near the Dirac point in graphene moiré superlattices
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• Electron-phonon coupling in a magic-angle twisted-bilayer graphene device
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