High-Temperature Quantum Valley Hall Effect with Quantized Resistance and a Topological Switch
arXiv:2408.07804 · doi:10.1126/science.adj3742
Abstract
Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. Here we show wide resistance plateaus in kink states - a manifestation of the quantum valley Hall effect in Bernal bilayer graphene - quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 Kelvin and is flat within a dc bias window of tens of mV. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.
21 pages, 5 main figures, with Supplementary Materials
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Cited by in corpus (14)
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- Topological Valley Transport in Bilayer Graphene Induced by Interlayer Sliding
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