Gate-defined Kondo lattices with valley-helical quantum dot arrays
arXiv:2408.07148 · doi:10.21468/SciPostPhys.19.1.024
Abstract
Kondo physics and heavy-fermion behavior have been predicted and observed in moiré materials. The electric tunability of moiré materials allows an in-situ study of Kondo lattices' phase diagrams, which is not possible with their intermetallic counterparts. However, moiré platforms rely on twisting, which introduces twisting angle disorder and undesired buckling. Here we propose device layouts for one- and two-dimensional gate-defined superlattices in Bernal bilayer graphene where localized states couple to dispersive valley-helical modes. 16We show that, under electronic interactions, these superlattices are described by an electrically-tunable Kondo-Heisenberg model.
arXiv comment16 pages, 6 figures
References in corpus (59)
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
- Chiral tunneling and the Klein paradox in graphene
- Moire bands in twisted double-layer graphene
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Gate-induced insulating state in bilayer graphene devices
- Asymmetry gap in the electronic band structure of bilayer graphene
- Kwant: a software package for quantum transport
- Electron-Electron Interactions in Graphene: Current Status and Perspectives
- Graphene Bilayers with a Twist
- Dirac cones reshaped by interaction effects in suspended graphene
- The break up of heavy electrons at a quantum critical point
- Observation of an Electric-Field Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy
- Onset of antiferromagnetism in heavy fermion metals
- Non-Fermi liquid behaviour of electrons in the half-filled honeycomb lattice (A renormalization group approach)
- Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
- Topological confinement in bilayer graphene
- Hidden Magnetism and Quantum Criticality in the Heavy Fermion Superconductor CeRhIn5
- Coulomb-driven broken-symmetry states in doubly gated suspended bilayer graphene
- Determination of the gate-tunable bandgap and tight-binding parameters in bilayer graphene using infrared spectroscopy
- Gate-controlled topological conducting channels in bilayer graphene
- Quantum critical scaling in graphene
- Multiple energy scales at a quantum critical point
- Pseudospin-valley coupled edge states in a photonic topological insulator
- Valley-Hall Kink and Edge States in Multilayer Graphene
- Effect of electron-electron interactions on the conductivity of clean graphene
- A valley valve and electron beam splitter
- Helical networks in twisted bilayer graphene under interlayer bias
- SU(4) Kondo Effect in Carbon Nanotubes
- Fermi-surface collapse and dynamical scaling near a quantum critical point
- Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots
- Helical Network Model for Twisted Bilayer Graphene
- Superconductivity on the threshold of magnetism in CePd2Si2 and CeIn3
- Emulating heavy fermions in twisted trilayer graphene
- Gate-defined electron-hole double dots in bilayer graphene
- Interacting Electrons in Graphene: Fermi Velocity Renormalization and Optical Response
- Observation of the spin-orbit gap in bilayer graphene by one-dimensional ballistic transport
- Band flattening in buckled monolayer graphene
- Chiral Kondo Lattice in Doped MoTe/WSe Bilayers
- Gate-tunable heavy fermion quantum criticality in a moiré Kondo lattice
- High-Temperature Quantum Valley Hall Effect with Quantized Resistance and a Topological Switch
- Superconducting proximity effect in a transparent van der Waals superconductor-metal junction
- The Orbitally Selective Mott Phase in Electron Doped Twisted TMDs: A Possible Realization of the Kondo Lattice Model
- Heavy Fermions and the Kondo Lattice: a 21st Century Perspective
- Coherent Jetting behind a gate-defined Channel in Bilayer Graphene
- Topological flat bands in strained graphene: substrate engineering and optical control
- Nanoscale electrostatic control in ultra clean van der Waals heterostructures by local anodic oxidation of graphite gates
- Correlation-induced valley topology in buckled graphene superlattices
- The Kondo Temperature of SU(4) Symmetric Quantum Dots
- Supersymmetric approach to heavy fermion systems
- Tangent fermions: Dirac or Majorana fermions on a lattice without fermion doubling
- Tunable interdot coupling in few-electron bilayer graphene double quantum dots
- Specular electron focusing between gate-defined quantum point contacts in bilayer graphene
- Extended Hubbard model describing small multi-dot arrays in bilayer graphene
- A ballistic electron source with magnetically-controlled valley polarization in bilayer graphene
- Impact of competing energy scales on the shell-filling sequence in elliptic bilayer graphene quantum dots
- How do edge states position themselves in a quantum Hall graphene pn junction?
- Probing valley phenomena with gate-defined valley splitters
- Lehmer's type congruences for lacunary harmonic sums