Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking

Abstract

We investigate the magnetotransport properties of quasi-free standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H${}_2$ intercalation. At the charge neutrality point the longitudinal resistance shows an insulating behavior, which follows a temperature dependence consistent with variable range hopping transport in a gapped state. In a perpendicular magnetic field, we observe quantum Hall states (QHSs) both at filling factors ($\nu$) multiple of four ($\nu =4,8,12$), as well as broken valley symmetry QHSs at $\nu =0$ and $\nu =6$. These results unambiguously show that the quasi-free standing graphene bilayer grown on the Si-face of SiC exhibits Bernal stacking.

12 pages, 5 figures

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• Epitaxial graphene morphologies probed by weak (anti)-localization
• Electron-electron interactions in non-equilibrium bilayer graphene
• Hydrodynamic study of edge spin-vortex excitations of fractional quantum Hall fluid