Morphology of graphene thin film growth on SiC(0001)

Abstract

Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy (LEEM) and angle-resolved photoemission (ARPES). We obtain an identification of single and bilayer of graphene film by comparing the characteristic features in electron reflectivity spectra in LEEM to the PI-band structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to accurately determine the local extent of graphene layers as well as the layer thickness.

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• Growth Structure and Work Function of Bilayer Graphene on Pd(111)
• Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking
• Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC
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• The stability of graphene band structures against an external periodic perturbation; Na on Graphene
• The effects of Moire lattice on the electronic properties of graphene
• Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride
• Three-Fold Diffraction Symmetry in Epitaxial Graphene and the SiC Substrate
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