The graphene/n-Ge(110) interface: structure, doping, and electronic properties

Abstract

The implementation of graphene in semiconducting technology requires the precise knowledge about the graphene-semiconductor interface. In our work the structure and electronic properties of the graphene/$n$-Ge(110) interface are investigated on the local (nm) and macro (from $\mu \mathrm{m}$ to mm) scales via a combination of different microscopic and spectroscopic surface science techniques accompanied by density functional theory calculations. The electronic structure of freestanding graphene remains almost completely intact in this system, with only a moderate $n$-doping indicating weak interaction between graphene and the Ge substrate. With regard to the optimization of graphene growth it is found that the substrate temperature is a crucial factor, which determines the graphene layer alignment on the Ge(110) substrate during its growth from the atomic carbon source. Moreover, our results demonstrate that the preparation routine for graphene on the doped semiconducting material ($n$-Ge) leads to the effective segregation of dopants at the interface between graphene and Ge(110). Furthermore, it is shown that these dopant atoms might form regular structures at the graphene/Ge interface and induce the doping of graphene. Our findings help to understand the interface properties of the graphene-semiconductor interfaces and the effect of dopants on the electronic structure of graphene in such systems.

submitted on 21.12.2017; manuscript and supplementary info

References in corpus (21)

• 30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes
• Fermi velocity engineering in graphene by substrate modification
• Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons
• Unfolding spinor wavefunctions and expectation values of general operators: Introducing the unfolding-density operator
• Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
• Ab initio GW many-body effects in graphene
• Growth of Epitaxial Graphene: Theory and Experiment
• Induced magnetism of carbon atoms at the graphene/Ni(111) interface
• Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
• Morphology of graphene thin film growth on SiC(0001)
• Structural and electronic properties of the graphene/Al/Ni(111) intercalation-like system
• Angle-resolved photoemission spectra of graphene from first-principles calculations
• Role of pseudospin in quasiparticle interferences in epitaxial graphene probed by high-resolution scanning tunneling microscopy
• Fourier Transform Scanning Tunneling Spectroscopy: the possibility to obtain constant energy maps and the band dispersion using a local measurement
• Direct vs. indirect optical recombination in Ge films grown on Si substrates
• Revisiting the Mn-doped Ge using the Heyd-Scuseria-Ernzerhof hybrid functional
• Direct growth of low-doped graphene on Ge/Si(001) surfaces
• Theoretical description of X-ray absorption spectroscopy of the graphene-metal interfaces
• Growth and electronic structure of graphene on semiconducting Ge(110)
• Temperature-Dependent Electron-Electron Interaction in Graphene on SrTiO3
• On the rotational alignment of graphene domains grown on Ge(110) and Ge(111)

Cited by in corpus (9)

• Epitaxial graphene/Ge interfaces: a minireview
• Driving with temperature the synthesis of graphene films on Ge(110)
• Single-Hemisphere Photoelectron Momentum Microscope With Time-of-Flight Recording
• Dirac-Electron Behavior for Spin-Up Electrons in Strongly Interacting Graphene on Ferromagnetic Mn${}_5$Ge${}_3$
• Intercalation of O${}_2$ and N${}_2$ in the Graphene/Ni Interfaces of Different Morphology
• Tuning the doping of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction
• Asymmetric Electrostatic Dodecapole: Compact Bandpass Filter with Low Aberrations for Momentum Microscopy
• Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing
• Electronic structure and magnetic properties of the graphene/Ni3Mn/Ni(111) trilayer