Growth and electronic structure of graphene on semiconducting Ge(110)
arXiv:1705.07699 · doi:10.1016/j.carbon.2017.06.079
Abstract
The direct growth of graphene on semiconducting or insulating substrates might help to overcome main drawbacks of metal-based synthesis, like metal-atom contaminations of graphene, transfer issues, etc. Here we present the growth of graphene on n-doped semiconducting Ge(110) by using an atomic carbon source and the study of the structural and electronic properties of the obtained interface. We found that graphene interacts weakly with the underlying Ge(110) substrate that keeps graphene's electronic structure almost intact promoting this interface for future graphene-semiconductor applications. The effect of dopants in Ge on the electronic properties of graphene is also discussed.
arXiv commentsubmitted on 06.04.2017
References in corpus (13)
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
- 30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes
- Visualizing Individual Nitrogen Dopants in Monolayer Graphene
- Directed self-organization of graphene nanoribbons on SiC
- Atomic Hole Doping of Graphene
- Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
- Induced magnetism of carbon atoms at the graphene/Ni(111) interface
- Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
- Graphene Grown on Ge(001) from Atomic Source
- Investigating the CVD synthesis of graphene on Ge(100): towards layer by layer growth
- Direct growth of low-doped graphene on Ge/Si(001) surfaces
- Theoretical description of X-ray absorption spectroscopy of the graphene-metal interfaces
- On the rotational alignment of graphene domains grown on Ge(110) and Ge(111)
Cited by in corpus (6)
- The graphene/n-Ge(110) interface: structure, doping, and electronic properties
- Epitaxial graphene/Ge interfaces: a minireview
- Early stage of CVD graphene synthesis on Ge(001) substrate
- Driving with temperature the synthesis of graphene films on Ge(110)
- Abrupt changes in the graphene on Ge(001) system at the onset of surface melting
- Dirac-Electron Behavior for Spin-Up Electrons in Strongly Interacting Graphene on Ferromagnetic MnGe