Abrupt changes in the graphene on Ge(001) system at the onset of surface melting
arXiv:1901.06311 · doi:10.1016/j.carbon.2019.01.043
Abstract
By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition temperature in close proximity to the Ge melting point, highlighting an abrupt change of the graphene's quality, morphology, electronic properties and growth mode at 930 degrees. We attribute this discontinuity to the incomplete surface melting of the Ge substrate and show how incomplete melting explains a variety of diverse and long-debated peculiar features of the graphene/Ge(001), including the characteristic nanostructuring of the Ge substrate induced by graphene overgrowth. We find that the quasi-liquid Ge layer formed close to 930 degrees is fundamental to obtain high-quality graphene, while a temperature decrease of 10 degrees already results in a wrinkled and defective graphene film.
arXiv commentin press
References in corpus (20)
- Raman spectroscopy as a versatile tool for studying the properties of graphene
- Quantifying defects in graphene via Raman spectroscopy at different excitation energies
- Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
- Atomic Structure of Graphene on SiO2
- Optical Separation of Mechanical Strain from Charge Doping in Graphene
- CMOS-compatible graphene photodetector covering all optical communication bands
- Image sensor array based on graphene-CMOS integration
- Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands
- Raman spectroscopy as probe of nanometer-scale strain variations in graphene
- Graphene Phase Modulator
- Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
- Ultrafast graphene-based broadband THz detector
- Melting and nonmelting of solid surfaces and nanosystems
- Graphene Grown on Ge(001) from Atomic Source
- Investigating the CVD synthesis of graphene on Ge(100): towards layer by layer growth
- Direct growth of low-doped graphene on Ge/Si(001) surfaces
- Real-time observation of epitaxial graphene domain reorientation
- Growth and electronic structure of graphene on semiconducting Ge(110)
- Early stage of CVD graphene synthesis on Ge(001) substrate
- Ripple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface