Investigating the CVD synthesis of graphene on Ge(100): towards layer by layer growth
arXiv:1805.01185 · doi:10.1021/acsami.6b11701
Abstract
Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-compatible processes. For future application in next generation devices the accurate control over the properties of high-quality graphene synthesized on Ge surfaces, such as number of layers and domain size, is of paramount importance. Here we investigate the role of the process gas flows on the CVD growth of graphene on Ge(100). The quality and morphology of the deposited material is assessed by using microRaman spectroscopy, x-ray photoemission spectroscopy, scanning electron and atomic force microscopies. We find that by simply varying the carbon precursor flow different growth regimes - yielding to graphene nanoribbons, graphene monolayer and graphene multilayer - are established. We identify the growth conditions yielding to a layer-by-layer growth regime and report on the achievement of homogeneous monolayer graphene with an average intensity ratio of 2D and G bands in the Raman map larger than 3.
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Cited by in corpus (9)
- Wafer-scale integration of graphene-based photonic devices
- Epitaxial graphene/Ge interfaces: a minireview
- Growth and electronic structure of graphene on semiconducting Ge(110)
- Early stage of CVD graphene synthesis on Ge(001) substrate
- Driving with temperature the synthesis of graphene films on Ge(110)
- Formation of extended thermal etch pits on annealed Ge wafers
- Abrupt changes in the graphene on Ge(001) system at the onset of surface melting
- Tuning the doping of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction
- Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing