Early stage of CVD graphene synthesis on Ge(001) substrate
arXiv:1805.01192 · doi:10.1016/j.carbon.2018.03.092
Abstract
In this work we shed light on the early stage of the chemical vapor deposition of graphene on Ge(001) surfaces. By a combined use of microRaman and x-ray photoelectron spectroscopies, and scanning tunneling microscopy and spectroscopy, we were able to individuate a carbon precursor phase to graphene nucleation which coexists with small graphene domains. This precursor phase is made of C aggregates with different size, shape and local ordering which are not fully sp2 hybridized. In some atomic size regions these aggregates show a linear arrangement of atoms as well as the first signature of the hexagonal structure of graphene. The carbon precursor phase evolves in graphene domains through an ordering process, associated to a re-arrangement of the Ge surface morphology. This surface structuring represents the embryo stage of the hills-and-valleys faceting featured by the Ge(001) surface for longer deposition times, when the graphene domains coalesce to form a single layer graphene film.
References in corpus (13)
- Quantifying defects in graphene via Raman spectroscopy at different excitation energies
- Probing the Nature of Defects in Graphene by Raman Spectroscopy
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- Optical Separation of Mechanical Strain from Charge Doping in Graphene
- Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands
- Raman spectroscopy as probe of nanometer-scale strain variations in graphene
- Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
- Factors influencing graphene growth on metal surfaces
- Contrasting Behavior of Carbon Nucleation in the Initial Stages of Graphene Epitaxial Growth on Stepped Metal Surfaces
- Investigating the CVD synthesis of graphene on Ge(100): towards layer by layer growth
- Rapid and catalyst-free CVD growth of graphene on hBN
- Direct growth of low-doped graphene on Ge/Si(001) surfaces
- Growth and electronic structure of graphene on semiconducting Ge(110)
Cited by in corpus (5)
- Solution-processed two-dimensional materials for next-generation photovoltaics
- Epitaxial graphene/Ge interfaces: a minireview
- Driving with temperature the synthesis of graphene films on Ge(110)
- Abrupt changes in the graphene on Ge(001) system at the onset of surface melting
- Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing