13 citations · 15 across the 2 of their papers we have counts for
5 papers
Driving with temperature the synthesis of graphene films on Ge(110)
L. Persichetti, M. De Seta, A. M. Scaparro +8
We systematically investigate the chemical vapor deposition growth of graphene on Ge(110) as a function of the deposition temperature close to the Ge melting point. By merging spec…
Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing
L. Persichetti, M. Fanfoni, B. Bonanni +5
Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(0…
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting
L. Persichetti, L. Di Gaspare, F. Fabbri +7
By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition…
Formation of extended thermal etch pits on annealed Ge wafers
L. Persichetti, M. Fanfoni, M. De Seta +4
An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by thermal cycles to T> 750 °C. This temperature range is relevant in many surface-prep…
Early stage of CVD graphene synthesis on Ge(001) substrate
L. Di Gaspare, A. M. Scaparro, M. Fanfoni +6
In this work we shed light on the early stage of the chemical vapor deposition of graphene on Ge(001) surfaces. By a combined use of microRaman and x-ray photoelectron spectroscopi…