29 citations · 88 across the 6 of their papers we have counts for
4 papers · 1 filter
Electronic structure of the Ge/Si(105) hetero-interface
Polina M. Sheverdyaeva, Conor Hogan, Anna Sgarlata +5
Thin Ge layers deposited on Si(105) form a stable single-domain film structure with large terraces and rebonded-step surface termination, thus realizing an extended and ordered Ge/…
Abrupt changes in the graphene on Ge(001) system at the onset of surface melting
L. Persichetti, L. Di Gaspare, F. Fabbri +7
By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition…
Formation of extended thermal etch pits on annealed Ge wafers
L. Persichetti, M. Fanfoni, M. De Seta +4
An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by thermal cycles to T> 750 °C. This temperature range is relevant in many surface-prep…
Early stage of CVD graphene synthesis on Ge(001) substrate
L. Di Gaspare, A. M. Scaparro, M. Fanfoni +6
In this work we shed light on the early stage of the chemical vapor deposition of graphene on Ge(001) surfaces. By a combined use of microRaman and x-ray photoelectron spectroscopi…