activity
20042019
most citedInvestigating the CVD synthesis of graphene on Ge(100): towards layer by layer growth

53 citations · 109 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2019★ 28 cited

Driving with temperature the synthesis of graphene films on Ge(110)

L. Persichetti, M. De Seta, A. M. Scaparro +8

We systematically investigate the chemical vapor deposition growth of graphene on Ge(110) as a function of the deposition temperature close to the Ge melting point. By merging spec…

cond-mat.mtrl-sci2018★ 53 cited

Investigating the CVD synthesis of graphene on Ge(100): towards layer by layer growth

A. M. Scaparro, V. Miseikis, C. Coletti +4

Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-compatible processes. For future application in next generation devices the accurate control ove…

q-bio.CB2010

Mapping cellular magnesium using X-ray microfluorescence and atomic force microscopy

Stefano Lagomarsino, Stefano Iotti, Giovanna Farruggia +12

Magnesium is the most abundant intracellular divalent cation. We present an innovative experimental approach to localizing intracellular magnesium that combines elemental and morph…

cond-mat.mes-hall2006

Conductance Quantization in Schottky-gated Si/SiGe Quantum Point Contacts

G. Scappucci, L. Di Gaspare, E. Giovine +3

We report on the fabrication and electronic transport characterisation of Schottky-gated strongly confined Si/SiGe quantum point contacts (QPC). At zero magnetic field and T=450mK…

cond-mat.mes-hall2005★ 22 cited

Conductance quantization in etched Si/SiGe quantum point contacts

G. Scappucci, L. Di Gaspare, E. Giovine +3

We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately…

cond-mat.mes-hall2004★ 6 cited

Low field magnetotransport in strained Si/SiGe cavities

G. Scappucci, L. Di Gaspare, F. Evangelisti +6

Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a…