Conductance quantization in etched Si/SiGe quantum point contacts

Abstract

We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e2/h. Non-linear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidences of the formation of a half 1e2/h plateau, supporting the speculation that adiabatic transmission occurs through 1D modes with complete removal of valley and spin degeneracies.

to appear in Physical Review B

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Cited by in corpus (6)

• Controllable valley splitting in silicon quantum devices
• Valley subband splitting in bilayer graphene quantum point contact
• Time-dependent magnetotransport of a wave packet in a quantum wire with embedded quantum dots
• Valley splitting in a Si/SiGe quantum point contact
• Room temperature differential-conductance staircase in suspended graphitic quantum point contacts
• Spin-valley 0.7 anomaly in bilayer graphene/WSe${}_2$ quantum point contacts