Dirac-Electron Behavior for Spin-Up Electrons in Strongly Interacting Graphene on Ferromagnetic MnGe
arXiv:1906.00359 · doi:10.1021/acs.jpclett.9b00893
Abstract
An elegant approach on the synthesis of graphene on the strong ferromagnetic (FM) material MnGe is proposed via intercalation of Mn in the graphene-Ge(111) interface. According to the DFT calculations, graphene in this strongly interacting system demonstrates the large exchange splitting of the graphene-derived band. In this case only spin-up electrons in graphene preserve the Dirac-electron-like character in the vicinity of the Fermi level and the K point, whereas such behavior is not detected for the spin-down electrons. This unique feature of the studied gr/FM-MnGe interface which can be prepared on the semiconducting Ge can lead to its application in spintronics.
arXiv commentmain text, figures, supporting information
References in corpus (14)
- Graphene: Status and Prospects
- 30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes
- Graphite and graphene as perfect spin filters
- Theoretical prediction of perfect spin filtering at interfaces between close-packed surfaces of Ni or Co and graphite or graphene
- Electronic and magnetic properties of the graphene-ferromagnet interface
- Induced magnetism of carbon atoms at the graphene/Ni(111) interface
- Structural and electronic properties of the graphene/Al/Ni(111) intercalation-like system
- Graphene growth and properties on metal substrates
- Strongly Enhanced Curie Temperature in Carbon-Doped Mn5Ge3 Films
- Understanding the origin of band gap formation in graphene on metals: graphene on Cu/Ir(111)
- Simulation of the enhanced Curie temperature in Mn_5Ge_3C_x compounds
- The graphene/n-Ge(110) interface: structure, doping, and electronic properties
- Growth and electronic structure of graphene on semiconducting Ge(110)
- Narrow photoluminescence peak of epitaxial MoS on graphene/Ir(111)