Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons
arXiv:0710.0469 · doi:10.1103/PhysRevB.77.075413
Abstract
Low-energy electron microscopy (LEEM) was used to measure the reflectivity of low-energy electrons from graphitized SiC(0001). The reflectivity shows distinct quantized oscillations as a function of the electron energy and graphite thickness. Conduction bands in thin graphite films form discrete energy levels whose wave vectors are normal to the surface. Resonance of the incident electrons with these quantized conduction band states enhances electrons to transmit through the film into the SiC substrate, resulting in dips in the reflectivity. The dip positions are well explained using tight-binding and first-principles calculations. The graphite thickness distribution can be determined microscopically from LEEM reflectivity measurements.
7 pages, 3 figures
References in corpus (5)
- Electric Field Effect in Atomically Thin Carbon Films
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
- Electronic structure of superconducting graphite intercalate compounds: The role of the interlayer state
Cited by in corpus (54)
- Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation
- Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2
- Evidence of structural strain in epitaxial graphene layers on 6H-SiC(0001)
- Factors influencing graphene growth on metal surfaces
- Growth from Below: Bilayer Graphene on Copper by Chemical Vapor Deposition
- Decoupling Graphene from SiC(0001) via Oxidation
- Spectro-microscopy of single and multi-layer graphene supported by a weakly interacting substrate
- Low-energy Electron Reflectivity from Graphene
- Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces
- The interface structure of epitaxial graphene grown on 4H-SiC(0001)
- Determination of the Number of Graphene Layers: Discrete Distribution of the Secondary Electron Intensity Derived from Individual Graphene Layers
- Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
- Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)
- Large area quasi-free standing monolayer graphene on 3C-SiC(111)
- Image potential states as quantum probe of graphene interfaces
- Graphene formed on SiC under various environments: Comparison of Si-face and C-face
- Effect of Oxygen Adsorption on the Local Properties of Epitaxial Graphene on SiC (0001)
- Low-Energy Electron Reflectivity of Graphene on Copper and other Substrates
- Making ARPES Measurements on Corrugated Monolayer Crystals: Suspended Exfoliated Single-Crystal Graphene
- Full field electron spectromicroscopy applied to ferroelectric materials
- Instability of two dimensional graphene: Breaking sp2 bonds with soft X-rays
- Growth Structure and Work Function of Bilayer Graphene on Pd(111)
- Graphene based quantum dots
- The graphene/n-Ge(110) interface: structure, doping, and electronic properties
- Stacking domains in graphene on silicon carbide: a pathway for intercalation
- Non-universal Transverse Electron Mean Free Path through Few-layer Graphene
- Silicon intercalation into the graphene-SiC interface
- Intercalation of graphene on SiC(0001) via ion-implantation
- Formation of Epitaxial Graphene on SiC(0001) using Vacuum or Argon Environments
- Interface Structure of Graphene on SiC(000-1)
- Silicon carbide stacking-order-induced doping variation in epitaxial graphene
- Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microscopy
- Atomistic mechanism of graphene growth on SiC substrate: Large-scale molecular dynamics simulation based on a new charge-transfer bond-order type potential
- Measuring the Local Twist Angle and Layer Arrangement in Van der Waals Heterostructures
- Charge spill-out and work function of few-layer graphene on SiC(0001)
- Quantitative analysis of spectroscopic Low Energy Electron Microscopy data: High-dynamic range imaging, drift correction and cluster analysis
- Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces
- Epigraphene : epitaxial graphene on silicon carbide
- Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC
- Vertical structure of Sb-intercalated quasifreestanding graphene on SiC(0001)
- Secondary Electron Emission by Plasmon Induced Symmetry Breaking in Highly Oriented Pyrolitic Graphite (HOPG)
- Structural characterization of as-grown and quasi-free standing graphene layers on SiC
- Charge Transfer Properties Through Graphene for Applications in Gaseous Detectors
- Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation
- Thickness characterization of atomically-thin WSe on epitaxial graphene by low-energy electron reflectivity oscillations
- Inelastic Effects in Low-Energy Electron Reflectivity of Two-dimensional Materials
- Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene
- Negative transit time in non-tunneling electron transmission through graphene multilayers
- Rubidium intercalation in epitaxial monolayer graphene
- Ab initio study of angle-resolved electron reflection spectroscopy of few-layer graphene
- Formation of Graphene on SiC(000-1) Surfaces in Disilane and Neon Environments
- Multi Graphene Growth on Lead Pencil Drawn Sliver-Halide Print Paper Irradiated by Scanning Femtosecond Laser
- Three-Fold Diffraction Symmetry in Epitaxial Graphene and the SiC Substrate
- Self-doping effects in epitaxially grown graphene