Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

Abstract

We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the sample is covered by 2-3 graphene layers. C1s spectromicroscopy provides an independent measurement of the graphene thickness distribution map. The work function, measured by photoelectron emission microscopy (PEEM), varies across the surface from 4.34 to 4.50eV according to both the graphene thickness and the graphene-SiC interface chemical state. At least two SiC surface chemical states (i.e., two different SiC surface structures) are present at the graphene/SiC interface. Charge transfer occurs at each graphene/SiC interface. K-space PEEM gives 3D maps of the k_|| pi - pi* band dispersion in micron scale regions show that the Dirac point shifts as a function of graphene thickness. Novel Bragg diffraction of the Dirac cones via the superlattice formed by the commensurately rotated graphene sheets is observed. The experiments underline the importance of lateral and spectroscopic resolution on the scale of future electronic devices in order to precisely characterize the transport properties and band alignments.

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• Approaching the Dirac point in high mobility multi-layer epitaxial graphene
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• The interface structure of epitaxial graphene grown on 4H-SiC(0001)
• Is room temperature ferromagnetism possible in K-doped SnO2?

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• The emergence of quantum capacitance in epitaxial graphene
• Controlling of the Dirac band states of Pb-deposited graphene by using work function difference
• Exploring interlayer Dirac cone coupling in commensurately rotated few-layer graphene on SiC(000-1)