Measuring the Local Twist Angle and Layer Arrangement in Van der Waals Heterostructures
arXiv:1806.05155 · doi:10.1002/pssb.201800191
Abstract
The properties of Van der Waals heterostructures are determined by the twist angle and the interface between adjacent layers as well as their polytype and stacking. Here we describe the use of spectroscopic Low Energy Electron Microscopy (LEEM) and micro Low Energy Electron Diffraction (μLEED) methods to measure these properties locally. We present results on a MoS/hBN heterostructure, but the methods are applicable to other materials. Diffraction spot analysis is used to assess the benefits of using hBN as a substrate. In addition, by making use of the broken rotational symmetry of the lattice, we determine the cleaving history of the MoS flake, i.e., which layer stems from where in the bulk.
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Cited by in corpus (9)
- Direct Imaging and Electronic Structure Modulation of Moiré Superlattices at the 2D/3D Interface
- Imaging moiré deformation and dynamics in twisted bilayer graphene
- Observation of flat moiré bands in twisted bilayer WSe
- Determining the Twist Angle of Bilayer Graphene by Machine Learning Analysis of its Raman Spectrum
- Non-universal Transverse Electron Mean Free Path through Few-layer Graphene
- Quantitative analysis of spectroscopic Low Energy Electron Microscopy data: High-dynamic range imaging, drift correction and cluster analysis
- Fano physics behind the N-resonance in graphene
- Unusual flat and extended morphology of intercalated Cu under MoS2
- Quantifying Twist Angles in Cuprate Heterostructures with Anisotropic Raman Signatures