activity
20082022
most citedThe quasi-free-standing nature of graphene on H-saturated SiC(0001)

271 citations · 721 across the 14 of their papers we have counts for

collaborators

15 papers

cond-mat.mes-hall2022★ 12 cited

Stacking domain morphology in epitaxial graphene on silicon carbide

Tobias A. de Jong, Luuk Visser, Johannes Jobst +2

Terrace-sized, single-orientation graphene can be grown on top of a carbon buffer layer on silicon carbide by thermal decomposition. Despite its homogeneous appearance, a surprisin…

cond-mat.mes-hall2022★ 1 cited

Low-Energy Electron Microscopy contrast of stacking boundaries: comparing twisted few-layer graphene and strained epitaxial graphene on silicon carbide

Tobias A. de Jong, Xingchen Chen, Johannes Jobst +3

Stacking domain boundaries occur in Van der Waals heterostacks whenever there is a twist angle or lattice mismatch between subsequent layers. Not only can these domain boundaries h…

cond-mat.str-el2020★ 30 cited

Direct evidence for flat bands in twisted bilayer graphene from nano-ARPES

Simone Lisi, Xiaobo Lu, Tjerk Benschop +21

Transport experiments in twisted bilayer graphene revealed multiple superconducting domes separated by correlated insulating states. These properties are generally associated with…

cond-mat.mtrl-sci2019

Growing a LaAlO3/SrTiO3 heterostructure on Ca2Nb3O10 nanosheets

Alexander J. H. van der Torren, Huiyu Yuan, Zhaoliang Liao +8

The two-dimensional electron liquid which forms between the band insulators LaAlO3 (LAO) and SrTiO3 (STO) is a promising component for oxide electronics, but the requirement of usi…

cond-mat.mtrl-sci2019★ 3 cited

Low-Energy Electron Potentiometry

Johannes Jobst, Jaap Kautz, Maria Mytiliniou +1

In a lot of systems, charge transport is governed by local features rather than being a global property as suggested by extracting a single resistance value. Consequently, techniqu…

physics.app-ph2019★ 1 cited

Patterning Sn-based EUV resists with low-energy electrons

Ivan Bespalov, Yu Zhang, Jarich Haitjema +5

Extreme Ultraviolet (EUV) lithography is the newest technology that will be used in the semiconductor industry for printing circuitry in the sub-20 nm scale. Low-energy electrons (…