The detection of Kondo effect in the resistivity of graphene: artifacts and strategies

Abstract

We discuss the difficulties to discover Kondo effect in the resistivity of graphene. Similarly to the Kondo effect, electron-electron interaction effects and weak localization appear as logarithmic corrections to the resistance. In order to disentangle these contributions, a refined analysis of the magnetoconductance and the magnetoresistance is introduced. We present numerical simulations which display the discrimination of both effects. Further, we present experimental data of magnetotransport. When magnetic molecules are added to graphene, a logarithmic correction to the conductance occurs, which apparently suggests Kondo physics. Our thorough evaluation scheme, however, reveals that this interpretation is not conclusive: the data can equally be explained by electron-electron interaction corrections in an inhomogeneous sample. Our evaluation scheme paves the way for a more refined search for the Kondo effect in graphene.

References in corpus (3)

• Ab initio Study of Graphene on SiC
• Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents
• The Physics of Kondo Impurities in Graphene

Cited by in corpus (8)

• Kondo effect in graphene with Rashba spin-orbit coupling
• Epigraphene : epitaxial graphene on silicon carbide
• Gate-tunable Kondo resistivity and dephasing rate in graphene studied by numerical renormalization group calculations
• Sublattice symmetry breaking and Kondo-effect enhancement in strained graphene
• Kondo effect due to a hydrogen impurity in graphene: a multichannel Kondo problem with diverging hybridization
• From Kondo to local singlet state in graphene nanoribbons with magnetic impurities
• Hard ferromagnetism down to the thinnest limit of iron-intercalated tantalum disulfide
• Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene