Interplay between interferences and electron-electron interactions in epitaxial graphene

Abstract

We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak localization and antilocalization are extracted at low magnetic fields, after elimination of a geometric magnetoresistance and subtraction of the magnetic field dependent Drude conductivity. The electron electron interaction correction is extracted at higher magnetic fields, where localization effects disappear. Both phenomena are weak but sizable and of the same order of magnitude. If compared to graphene on silicon dioxide, electron electron interaction on epitaxial graphene are not significantly reduced by the larger dielectric constant of the SiC substrate.

References in corpus (7)

• Strong suppression of weak (anti)localization in graphene
• Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
• Electronic transport in graphene: A semi-classical approach including midgap states
• Weak localisation in graphene flakes
• Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
• Weak antilocalization in epitaxial graphene: evidence for chiral electrons
• Graphene: A Pseudochiral Fermi Liquid

Cited by in corpus (13)

• Manifestation of electron-electron interaction in the magnetoresistance of graphene
• The detection of Kondo effect in the resistivity of graphene: artifacts and strategies
• Gate tunable quantum transport in double layer graphene
• Localization physics in graphene Moire superlattices
• Magnetoresistance of disordered graphene: from low to high temperatures
• Tuning of quantum interference in top-gated graphene on SiC
• Room-temperature quantum transport signatures in graphene/LaAlO3/SrTiO3 heterostructures
• Relationship between conductance fluctuation and weak localization in graphene
• Quantum corrections to transport in graphene: a trajectory-based semiclassical analysis
• Ballistic magnetotransport in graphene
• Finite-size scaling in a 2D disordered electron gas with spectral nodes
• Dimensionality-dependent type-II Weyl semimetal state in Mo${}_{0.25}$W${}_{0.75}$Te${}_2$
• High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen