Ballistic magnetotransport in graphene
arXiv:2110.03844 · doi:10.1103/PhysRevB.105.L121114
Abstract
We report that a perpendicular magnetic field introduces an anomalous interaction correction, , to the static conductivity of doped graphene in the ballistic regime. The correction implies that the magnetoresistance, scales inversely with temperature in a parametrically large interval. When the disorder is scalar-like, the behavior is the leading contribution in the crossover between diffusive regime exhibiting weak localization and quantum magnetooscillations. The behavior originates from the field-induced breaking of the chiral symmetry of Dirac electrons around a single valley. The result is specific for generic two-dimensional Dirac materials which deviate from the half-filling. We conclude by proposing magnetotransport experiments, which have the capacity to detect the nature of impurities and defects in high-mobility Dirac monolayers such as recently fabricated ballistic graphene samples.
arXiv comment11 pages, 4 figures
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