Suspended Graphene: a bridge to the Dirac point
arXiv:0802.2933 · doi:10.1038/nnano.2008.199
Abstract
The recent discovery of methods to isolate graphene, a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the extraordinary electrical transport and unusual physical properties of this material. However, the experimental realization of devices displaying these properties was, until now, hampered by the influence of the ambient environment, primarily the substrate. Here we report on the fabrication of Suspended Graphene devices and on studies of their electrical transport properties. In these devices, environmental disturbances were minimized allowing unprecedented access to the intrinsic properties of graphene close to the Dirac Point (DP) where the energy dispersion of the carriers and their density-of-states vanish linearly giving rise to a range of exotic physical properties. We show that charge inhomogeneity is reduced by almost one order of magnitude compared to that in Non-Suspended Graphene devices. Moreover, near the DP, the mobility exceeds 100,000 cm2/Vs, approaching theoretical predictions for evanescent transport in the ballistic model.
18 pages, 4 figurs
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- Disordered Electrical Potential Observed on the Surface of SiO by Electric Field Microscopy
- Exploring van der Waals cuprate superconductors using a hybrid microwave circuit
- Tuning thermoelectric efficiency of polyaniline sheet by strain engineering
- Ultrabroad-Band, Greatly Enhanced Light Absorption by Monolayer Graphene
- In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices
- Optimization of epitaxial graphene growth for quantum metrology
- Current enhancement due to field-induced dark carrier multiplication in graphene
- Superfluid Stiffness and Josephson Quantum Capacitance: Adiabatic Approach and Topological Effects
- Non-linear photoconductivity of strongly driven graphene
- Nanoscale Graphene Electro-Optic Modulators
- Growth of Tall Vertical Carbon Nanotube Forests using Al-Fe Catalysts and Transfer to Flexible Substrates
- Probing charged impurities in suspended graphene using Raman spectroscopy
- From Ohmic to Ballistic Transport in Oriented Graphite
- Two-dimensional Penta-Pt2N4: an ideal material for nanoelectronics
- Energy-efficient tunable silicon photonic micro-resonator with graphene transparent nano-heaters
- Hydrogen-mediated CVD epitaxy of Graphene on SiC: growth mechanism and atomic configuration
- Unconventional magnetisation texture in graphene / cobalt hybrids
- Triple Antidot Molecules
- Gate-tunable spin-valley transport via carrier velocity in monolayer WSe
- Visualizing Encapsulated Graphene, its Defects and its Charge Environment by Sub-Micrometer Resolution Electrical Imaging
- Many-body effects in suspended graphene probed through magneto-phonon resonances
- Photoluminescence quenching in gold - MoS2 hybrid nanoflakes
- Mimicing the Kane-Mele type spin orbit interaction by spin-flexual phonon coupling in graphene devices
- A simple method to produce almost perfect graphene on highly oriented pyrolytic graphite
- Non-Abelian Charge Transport in Three-Flavor Gauge Semimetal Model with Braiding Majoranas
- Plasmons and terahertz devices in graphene
- First-principles study of 3d transition metal atom adsorption onto graphene: the role of the extended line defect
- Nonlinear Optical Conductivity in Graphene and other 2-Band 2-D Materials
- Device Chemistry of Graphene Transistors
- Clar Sextet Analysis of Triangular, Rectangular and Honeycomb Graphene Antidot Lattices
- Fluctuation-induced giant magnetoresistance in charge-neutral graphene