Shot Noise in Graphene

Abstract

We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multi-layer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theoretical predictions for shot noise in ballistic and disordered graphene.

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References in corpus (5)

• Electric Field Effect in Atomically Thin Carbon Films
• Ballistic transmission through a graphene bilayer
• Conductivity and Fano factor in disordered graphene
• Effective contact model for transport through weakly-doped graphene
• Phase coherent transport in a side-gated mesoscopic graphite wire

Cited by in corpus (12)

• Suspended Graphene: a bridge to the Dirac point
• Charge Transport in Disordered Graphene-Based Low Dimensional Materials
• Shot Noise in Ballistic Graphene
• Contact resistance and shot noise in graphene transistors
• Ballistic transport in disordered graphene
• Electronic properties of the armchair graphene nanoribbon
• Temperature dependence of the conductivity of ballistic graphene
• Evanescent wave transport and shot noise in graphene: ballistic regime and effect of disorder
• Charge transport and shot noise in ballistic graphene sheet
• Weak momentum scattering and the conductivity of graphene
• Electronic shot noise in fractal conductors
• Shot Noise Probing of Magnetic Ordering in Zigzag Graphene Nanoribbons