Pseudospin polarized quantum transport in monolayer graphene
arXiv:1110.0637 · doi:10.1103/PhysRevB.83.115422
Abstract
Monolayer graphene with an energy gap presents a pseudospin symmetry broken ferromagnet with a perpendicular pseudomagnetization whose direction is switched by altering the type of doping between n and p. We demonstrate an electrical current switching effect in pseudospin version of a spin valve in which two pseudoferromagnetic regions are contacted through a normal graphene region. The proposed structure exhibits a pseudomagnetoresistance, defined as the relative difference of resistances of parallel and antiparallel alignments of the pseudomagnetizations, which can be tuned to unity. This perfect pseudomagnetic switching is found to show a strong robustness with respect to increasing of the contact length, the effect which we explain in terms of an unusually long range penetration of an equilibrium pseudospin polarization into the normal region by proximity to a pseudoferromagnet. Our results reveals the potential of gapped graphene for realization of pseudospin-based nanoelectronics.
6 pages, 5 figures
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- Strain control of real-and lattice-spin currents in a silicene junction
- Lattice-pseudospin and spin-valley polarizations in dual ferromagnetic-gated silicene junction
- Charge-pseudospin coupled diffusion in semi-Dirac graphene: pseudospin assisted valley transport
- Orbital magnetic moments in insulating Dirac systems: Impact on magnetotransport in graphene van der Waals heterostructures
- Gate control of lattice-pseudospin currents in graphene on WS2: Effect of sublattice symmetry breaking and spin-orbit interaction
- New supercurrent pattern in quantum point contact with strained graphene nanoribbon
- Quantum transport of pseudospin-polarized Dirac fermions in gapped graphene nanostructures