Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization

Abstract

We theoretically investigate the unusual features of the magnetotransport in a monolayer phosphorene ferromagnetic/normal/ferromagnetic (F/N/F) hybrid structure. We find that the charge conductance can feature a minimum at parallel (P) configuration and a maximum near the antiparallel (AP) configuration of magnetization in the F/N/F structure with $n$-doped F and $p$-doped N regions and also a finite conductance in the AP configuration with the N region of $n$-type doping. In particular, the proposed structure exhibits giant magnetoresistance, which can be tuned to unity. This perfect switching is found to show strong robustness with respect to increasing the contact length and tuning the chemical potential of the N region with a gate voltage. We also explore the oscillatory behavior of the charge conductance or magnetoresistance in terms of the size of the N region. We further demonstrate the penetration of the spin-transfer torque into the right F region and show that, unlike graphene structure, the spin-transfer torque is very sensitive to the chemical potential of the N region as well as the exchange field of the F region.

arXiv comment10 pages, 7 figures

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• Resonance spin transfer torque in ferromagnetic/normal/ferromagnetic spin-valve structure of topological insulators
• Current-induced spin-orbit torque on the surface of a transition metal dichalcogenide connected to a two-dimensional ferromagnet CrI${}_3$: Effects of twisting and gating