Enhancement of Spin-transfer torque switching via resonant tunneling
arXiv:1411.6454 · doi:10.1063/1.4904408
Abstract
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.
arXiv comment5 pages, 5 figures
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- Enhancement of Thermal Spin Transfer Torque via Bandpass Energy Filtering
- Giant spin transfer torque in atomically thin magnetic bilayers
- Effects of Elastic Dephasing on Scaling of ultra-small Magnetic Tunnel Junctions
- Band-pass superlattice magnetic tunnel junctions