Effects of Elastic Dephasing on Scaling of ultra-small Magnetic Tunnel Junctions

Abstract

The study of the effects of scaling on magnetic tunnel junction (MTJ) devices has become an important topic in the field of spin-based memory devices. Here, we investigate the effect of elastic dephasing on trilayer and pentalayer MTJ considered at small transverse cross-sectional areas using the non-equilibrium Green's function spin transport formalism. We consider the structures with and without dephasing effects and clearly point out as to how the tunnel magnetoresistance effect gets affected by dephasing. We attribute the trends noted by analyzing the transmission spectra and hence the currents across the devices. Although dephasing affects the TMR values for both devices, we note that the obtained TMR values are still in a reasonable range that may not hinder their usability for practical applications.

References in corpus (8)

• Microwave Oscillations of a Nanomagnet Driven by a Spin-Polarized Current
• Proposal of a spin torque majority gate logic
• Non-equilibrium Green s function based model for dephasing in quantum transport
• Quantum Transport with Spin Dephasing: A Nonequilibrium Green's Function Approach
• Enhancement of Spin-transfer torque switching via resonant tunneling
• Proposal for a Domain Wall Nano-Oscillator driven by Non-uniform Spin Currents
• Ultra-sensitive nanoscale magnetic field sensors based on resonant spin filtering
• Scaling Projections on Spin Transfer Torque Magnetic Tunnel Junctions