Proposal of a spin torque majority gate logic

Abstract

A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is switched by spin transfer torque. Validity of its logic operation is demonstrated by micromagnetic simulation. A version of such devices with perpendicular magnetization is examined. Switching encompasses moving domain walls. The device reuses most of the materials and structures from spin torque RAM, and is entirely compatible with CMOS technology.

14 pages, 4 figures

References in corpus (2)

• Spin-Torque Driven Magnetization Dynamics: Micromagnetic Modelling
• High domain wall velocities due to spin currents perpendicular to the plane

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