Room-Temperature Highly-Tunable Coercivity and Highly-Efficient Nonvolatile Multi-States Magnetization Switching by Small Current in Single 2D Ferromagnet Fe${}_3$GaTe${}_2$

Abstract

Room-temperature electrically-tuned coercivity and nonvolatile multi-states magnetization switching is crucial for next-generation low-power 2D spintronics. However, most methods have limited ability to adjust the coercivity of ferromagnetic systems, and room-temperature electrically-driven magnetization switching shows high critical current density and high power dissipation. Here, highly-tunable coercivity and highly-efficient nonvolatile multi-states magnetization switching are achieved at room temperature in single-material based devices by 2D van der Waals itinerant ferromagnet Fe${}_3$GaTe${}_2$. The coercivity can be readily tuned up to ~98.06% at 300 K by a tiny in-plane electric field that is 2-5 orders of magnitude smaller than that of other ferromagnetic systems. Moreover, the critical current density and power dissipation for room-temperature magnetization switching in 2D Fe${}_3$GaTe${}_2$ are down to ~1.7E5 A cm${}^{-2}$ and ~4E12 W m${}^{-3}$, respectively. Such switching power dissipation is 2-6 orders of magnitude lower than that of other 2D ferromagnetic systems. Meanwhile, multi-states magnetization switching are presented by continuously controlling the current, which can dramatically enhance the information storage capacity and develop new computing methodology. This work opens the avenue for room-temperature electrical control of ferromagnetism and potential applications for vdW-integrated 2D spintronics.

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Cited by in corpus (5)

• All van der Waals three-terminal SOT-MRAM realized by topological ferromagnet Fe3GeTe2
• Above-room-temperature intrinsic ferromagnetism in ultrathin van der Waals crystal Fe${}_{3+x}$GaTe${}_2$
• Magnetoelectric effect in van der Waals magnets
• Artificially creating emergent interfacial antiferromagnetism and its manipulation in a magnetic van-der-Waals heterostructure
• Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2