Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2

Abstract

We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs consistently at around 0.625 V across multiple devices and temperatures, highlighting the robustness of the effect. To understand this behavior, we developed a theoretical model incorporating spin-resolved density of states (DOS) at high energy levels. By adjusting the DOS weighting at different k points to account for misalignment between the crystal structure of electrodes in experimental devices, we improved agreement between experimental and theoretical inversion voltages. Our results provide valuable insight into the voltage-controlled spin injection and detection in two-dimensional magnetic tunnel junctions, with implications for the development of energy-efficient spintronic devices.

arXiv comment4 Figures

References in corpus (19)

• Spintronics: Fundamentals and applications
• Van der Waals heterostructures
• Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
• Discovery of intrinsic ferromagnetism in 2D van der Waals crystals
• Anomalous Hall effect
• Gate-tunable Room-temperature Ferromagnetism in Two-dimensional Fe${}_3$GeTe${}_2$
• Two-Dimensional Itinerant Ising Ferromagnetism in Atomically thin Fe3GeTe2
• Colloquium: Spintronics in graphene and other two-dimensional materials
• Tunneling spin valves based on Fe${}_3$GeTe${}_2$/hBN/Fe${}_3$GeTe${}_2$ van der Waals heterostructures
• Quantitative simulation of temperature dependent magnetization dynamics and equilibrium properties of elemental ferromagnets
• Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization
• Room-Temperature Spin-Valve Effect in Fe${}_3$GaTe${}_2$/MoS${}_2$/Fe${}_3$GaTe${}_2$ 2D van der Waals Heterojunction Devices
• Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions
• Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions
• Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe${}_3$GaTe${}_2$ with highly spin-polarized Fermi surfaces
• Room-temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures
• Room-temperature orbit-transfer torque enabling van der Waals magnetoresistive memories
• Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers
• Room-Temperature Highly-Tunable Coercivity and Highly-Efficient Nonvolatile Multi-States Magnetization Switching by Small Current in Single 2D Ferromagnet Fe${}_3$GaTe${}_2$