Room-temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures

Abstract

The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The exploration of vdW MTJ devices with high working temperature and adjustable functionalities holds great potential for advancing the application of 2D materials in magnetic sensing and data storage. Here, we report the observation of highly tunable room-temperature tunneling magnetoresistance through electronic means in a full vdW Fe3GaTe2/WSe2/Fe3GaTe2 MTJ. The spin valve effect of the MTJ can be detected even with the current below 1 nA, both at low and room temperatures, yielding a tunneling magnetoresistance (TMR) of 340% at 2 K and 50% at 300 K, respectively. Importantly, the magnitude and sign of TMR can be modulated by a DC bias current, even at room temperature, a capability that was previously unrealized in full vdW MTJs. This tunable TMR arises from the contribution of energy-dependent localized spin states in the metallic ferromagnet Fe3GaTe2 during tunnel transport when a finite electrical bias is applied. Our work offers a new perspective for designing and exploring room-temperature tunable spintronic devices based on vdW magnet heterostructures.

References in corpus (5)

• VI3 - a new layered ferromagnetic semiconductor
• Quantitative simulation of temperature dependent magnetization dynamics and equilibrium properties of elemental ferromagnets
• Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization
• Room-Temperature Spin-Valve Effect in Fe${}_3$GaTe${}_2$/MoS${}_2$/Fe${}_3$GaTe${}_2$ 2D van der Waals Heterojunction Devices
• Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe${}_3$GaTe${}_2$ with highly spin-polarized Fermi surfaces

Cited by in corpus (5)

• Above-room-temperature ferromagnetism in large-area epitaxial Fe3GaTe2/graphene van der Waals heterostructures
• Unconventional bias-dependent tunneling magnetoresistance in van der Waals ferromagnetic/semiconductor heterojunctions
• Local Inversion Symmetry Breaking and Thermodynamic Evidence for Ferrimagnetism in Fe3GaTe2
• Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2
• Bias Voltage Driven Tunneling Magnetoresistance Polarity Reversal in 2D Stripy Antiferromagnet CrOCl