Room-Temperature Spin-Valve Effect in Fe${}_3$GaTe${}_2$/MoS${}_2$/Fe${}_3$GaTe${}_2$ 2D van der Waals Heterojunction Devices

Abstract

Spin-valve effect has been the focus of spintronics over the last decades due to its potential in many spintronic devices. Two-dimensional (2D) van der Waals (vdW) materials are highly expected to build the spin-valve heterojunction. However, the Curie temperatures (TC) of the vdW ferromagnetic 2D crystals are mostly below room temperature (~30-220 K). It is very challenging to develop room temperature, ferromagnetic (FM) 2D crystals based spin-valve devices which are still not available to date. We report the first room temperature, FM 2D crystal based all-2D vdW Fe3GaTe2/MoS2/Fe3GaTe2 spin valve devices. The Magnetoresistance (MR) of the all- devices is up to 15.89% at 2.3 K and 11.97% at 10 K, 4-30 times of MR from the spin valves of Fe${}_3$GaTe${}_2$/MoS${}_2$/Fe${}_3$GaTe${}_2$ and conventional NiFe/MoS${}_2$/NiFe. Typical spin valve effect shows strong dependence on MoS2 spacer thickness in the vdW heterojunction. Importantly, the spin valve effect (0.31%) still robustly exists at 300 K with low working currents down to 10 nA (0.13 A/cm${}^2$). The results provide a general vdW platform to room temperature, 2D FM crystals based 2D spin valve devices.

References in corpus (3)

• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures
• Efficient spin injection and giant magnetoresistance in Fe/MoS${}_2$/Fe junctions

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• Above-room-temperature intrinsic ferromagnetism in ultrathin van der Waals crystal Fe${}_{3+x}$GaTe${}_2$
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• Giant Exfoliation Induced Magnetic Coercivity in Fe${}_3$GaTe${}_2$