Electronic structure of above-room-temperature van der Waals ferromagnet Fe$_3$GaTe$_2$

Ji-Eun Lee; Shaohua Yan; Sehoon Oh; Jinwoong Hwang; Jonathan D. Denlinger; Choongyu Hwang; Hechang Lei; Sung-Kwan Mo; Se Young Park; Hyejin Ryu

doi:10.1021/acs.nanolett.3c03203

paper

Electronic structure of above-room-temperature van der Waals ferromagnet Fe $_{3}$ GaTe $_{2}$

arXiv:2403.09846 · doi:10.1021/acs.nanolett.3c03203

Abstract

Fe $_{3}$ GaTe $_{2}$ , a recently discovered van der Waals ferromagnet, demonstrates intrinsic ferromagnetism above room temperature, necessitating a comprehensive investigation of the microscopic origins of its high Curie temperature ( $T$ $_{C}$ ). In this study, we reveal the electronic structure of Fe $_{3}$ GaTe $_{2}$ in its ferromagnetic ground state using angle-resolved photoemission spectroscopy and density functional theory calculations. Our results establish a consistent correspondence between the measured band structure and theoretical calculations, underscoring the significant contributions of the Heisenberg exchange interaction ( $J$ $_{e x}$ ) and magnetic anisotropy energy to the development of the high- $T$ $_{C}$ ferromagnetic ordering in Fe $_{3}$ GaTe $_{2}$ . Intriguingly, we observe substantial modifications to these crucial driving factors through doping, which we attribute to alterations in multiple spin-splitting bands near the Fermi level. These findings provide valuable insights into the underlying electronic structure and its correlation with the emergence of high- $T$ $_{C}$ ferromagnetic ordering in Fe $_{3}$ GaTe $_{2}$ .

25 pages, 4 figures

Electronic structure of above-room-temperature van der Waals ferromagnet Fe $_{3}$ GaTe $_{2}$

Abstract

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Electronic structure of above-room-temperature van der Waals ferromagnet Fe3​GaTe2​

Abstract

References in corpus (7)

Cited by in corpus (12)

Electronic structure of above-room-temperature van der Waals ferromagnet Fe $_{3}$ GaTe $_{2}$