Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe${}_3$GaTe${}_2$ with highly spin-polarized Fermi surfaces

Abstract

Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW material has largely impedes its development in practical spintronics devices. Inspired by the recently discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principles calculations. It is found that Fe3GaTe2 with highly spin-polarized Fermi surface ensures that such magnetic tunnel junctions may have prominent tunneling magnetoresistance effect at room temperature even comparable to existing conventional AlOx and MgO-based MTJs. Our results suggest that Fe3GaTe2-based MTJs may be the promising candidate for realizing long-waiting full magnetic vdW spintronic devices.

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Cited by in corpus (10)

• Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization
• Electronic structure of above-room-temperature van der Waals ferromagnet Fe${}_3$GaTe${}_2$
• Room-temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures
• Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet
• Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb
• Spectral Evidence for Local-Moment Ferromagnetism in van der Waals Metals Fe${}_3$GaTe${}_2$ and Fe${}_3$GeTe${}_2$
• Above-room-temperature intrinsic ferromagnetism in ultrathin van der Waals crystal Fe${}_{3+x}$GaTe${}_2$
• Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2
• Highly tunable Gilbert damping in two-dimensional van der Waals ferromagnet Fe3GaTe2: From bilayer to the twisted bilayer
• Why Fe${}_3$GaTe${}_2$ has higher Curie temperature than Fe${}_3$GeTe${}_2$?